Browsing by Subject "Gallium nitride"
Now showing items 1-13 of 13
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Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Electronic and interface properties of polyfluorene films on GaN for hybrid optoelectronic applications
(2013)Electronic and interface properties of spin-coated poly(9,9- dioctylfluorenyl-2,7-diyl) (PFO) films on GaN have been investigated in terms of their potential for optoelectronic applications. The PFO/GaN interface was studied ...
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Femtosecond time-resolved study in InxGa1-xN (0001) ultrathin epilayers: Effects of high indium mole fraction and thickness of the films
(2006)In view of promising full-solar-spectrum photovoltaic systems based on Inx Ga1-x N ternary alloys, femtosecond time-resolved study in ultrathin epilayers was employed in order to extract the fundamental properties of ...
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Article
Gallium hydride vapor phase epitaxy of GaN nanowires
(2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
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Article
Gallium hydride vapor phase epitaxy of GaN nanowires
(2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
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Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2
(2010)High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...
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Article
Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2
(2010)High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...
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Article
Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells
(2009)We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. ...
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Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson-Schrödinger calculations and capacitance-voltage profiling
(2002)The two-dimensional electron gas (2DEG) distribution and conduction-band profile tailoring of the Al xGa 1-xN/GaN/Al yGa 1-yN/GaN double heterostructure (DH) has been studied in detail by self-consistent Poisson-Schrödinger ...
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Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
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A systematic investigation into the conversion of Β-Ga 2O3 to GaN nanowires using NH3 and H 2: Effects on the photoluminescence properties
(2010)GaN nanowires (NWs) with a hexagonal wurtzite crystal structure, diameters of 50 nm and lengths of 10 μm have been obtained from postgrowth nitridation of monoclinic Β-Ga2O3 NWs using NH3 between 700-1090 °C. The conversion ...
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Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers: Effects of high fluence excitation
(2006)Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers were investigated, using femtosecond transient differential transmission and reflection measurements for x=0.07, 0.15, and 0.33, over a fluence range of 1-12 mJ ...